Quartz Wafer Substrate hmanga siam a ni
Quartz Wafer Substrates hi wafer a ni ber a, high-purity quartz (SiO2) atanga siam a ni a, semiconductor, optoelectronics, micro-electromechanical system (MEMS), optical device leh field dang dangah te hman lar tak a ni.
Hrilhfiahna
Thil awmzia (Material Properties) te
- Thianghlimna sang tak:A tlangpuiin synthetic quartz (eg, fused silica) atanga siam a ni a, a thianghlimna sang tak (>=99.99%) leh device performance tichhe lo turin bawlhhlawh tlem ber a ni.
- Thermal Stability a awm theih nan:Thermal expansion coefficient hniam (≈0.55×10−6/℃) leh temperature resistance sang-temperature resistance (softening point ~1600℃), temperature sang -temperature process atana tha.
- Optical lama hnathawh dan: 1.1.Transmission range zau tak (UV to IR), UV transmittance danglam tak nei, photomask, lens, etc. atan a tha hle.
- Chemical lama inertness a awm loh chuan:Acid leh alkalis (hydrofluoric acid tih loh) laka invenna nei, wet etching process atana tha.
- Electrical Insulation hman dan tur: 1.1.High resistivity (>1016 Ω·cm), substrate emaw high-frequency device emaw insulating atan a tha hle.
Dilna hrang hrang
Semiconductor siam chhuahna lam
- Photomask substrate te chu a hnuaia mi ang hian a ni
- EUV lithography component hrang hrangte
- Wafer processing kengtute
Photonics leh Optoelectronics te a ni
- Optical waveguide substrate te chu a awm a
- Laser diode hmanga dah theihna
- Quantum computing hmanrua te
Specialty Dilna hrang hrang
- MEMS resonator base te chu a awm a
- Space telescope hmanga thil hmuh theih
- Energy sang tak-laser system hmanga siam
Thil siam chhuah dan tur
- Raw Material siam chhuah dan: 1.1.Vapor deposition (eg, SiCl4 oxidation) emaw natural quartz tihthianghlimna hmanga siam a ni.
- Melting leh Forming: 1.1.High-temperature melting hnuah ingot-ah a lum emaw, rod-ah direct-a draw emaw a ni.
- Cutting: 1.1.Diamond wire saw emaw laser cutting emaw hmangin wafer te tak teah sliced a ni.
- Grinding leh Polishing te: 1.1.Chemical mechanical polishing (CMP) hian nanometer-level a smoothness a ti thei a ni.
- Faina leh Enfiah: 1.1.Particle leh metal bawlhhlawh paih chhuah a, chumi hnuah defect leh parameter testing neih a ni.
Thil neih
|
Taksa lam thil neih (Pysical Properties). |
Hlutna (value) te |
|
Thianghlimna |
＞99.99% |
|
Sakhal zawng |
2.2g/cm a ni3 |
|
Transparency a ni |
＞90% |
|
Mohs Hardness a ni |
5.5--6.5 |
|
Deformation Point a ni |
1280℃a ni |
|
Softening Point a ni |
1750℃a ni |
|
Annealing Point a ni |
1250℃a ni |
|
A lumna bik (20 - 350℃) . |
670J/kg a ni. degree |
|
A rilru a buai em em a, a rilru a hah em em bawk a. 20℃) . |
1.4W/m a ni. degree |
|
A chhuahna tur hmun (w/mk,1000℃) . |
1.0-1.2 |
|
Refractive Index a ni |
1.4585 |
|
A rilru a buai em em a, a rilru a hah em em bawk a. Coefficient of Thermal Expansion |
5.510 -7cm/cm a ni. degree |
|
Hot - hnathawhna Temperature |
1750--2050℃thleng a ni |
|
Hun rei lote - chhunga Service Temperature |
1450℃a ni |
|
Hun rei tak - chhung Service Temperature |
1100℃a ni |
|
Chemical lama thil awm dan |
Hlutna (value) te |
|
Acid laka a him lo |
Acid chak tak(HF tih loh chu),Alkali chak tak, organic solution |
|
Temperature sang takah Corrosion resistant a awm thei |
A tha lutuk |
|
Metal bawlhhlawh awm zat |
<5 ppm a ni |
|
Electric lama thil awm dan |
Hlutna (value) te |
|
Resistivity (resistivity) a ni |
7107Ω.cm a ni |
|
Insulation chakna |
250~400Kv/cm a ni |
|
Dielectric Constant hmanga siam a ni |
3.7~3.9 |
|
Dielectric Absorption Coefficient a ni a, a chhuahna tur hmun leh a hmanna tur a ni |
＜410-4 |
|
Dielectric hloh zat (Dielectric loss Coefficient) a ni |
＜110-4 |
|
Mechanical lama thil awm dan |
Hlutna (value) te |
|
Compressive chakna a nei |
1100MPa a ni |
|
Bending chakna |
67MPa a ni |
|
Tensile chakna a nei |
48MPa a ni |
|
Poisson-a Ratio a ni |
0.14~0.17 |
|
Young-a Modulus a ni |
72000MPa a ni |
|
Shear Modulus a ni |
31000MPa a ni |
FAQ
Q1: Quartz wafer substrate size awm zat sang ber chu engzat nge ni?
A: Standard production 300mm diameter thleng, R&D atan 450mm prototype a awm bawk.
Q2: Thickness profile customized i pe thei ang em?
A: Ni e - kan siam thei:
- Wedged wafers (laser hmanga hman tur) .
- Tapered design dik tak
- Mesa-structured surface te chu a awm a
Q3: Eng cleaning protocol nge i rawt?
A: Standard RCA thianghlimna kalphung:
1. Organic hmanga paih chhuah (H2SO4:H2O2) .
2. Ionic hmanga tihfai (HCl:H2O2) .
3. HF-a hnuhnung ber chu hydrophilic surface atan
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