Quartz Bell Jar hmanga siam a ni
• Quartz Glass thianghlimna sang tak-Thianghlim
• Thermal Stability nasa tak a awm
• Chemical Inertness sang zawk a awm
• Optical Transparency a awm thei
• Machine hmanga siam Edge dik tak
Hrilhfiahna
Dilna Field hrang hrang
Semiconductor leh Microelectronics te chu a hnuaia mi ang hian a ni.
CVD/PVD chamber, lithography system, leh wafer hmanna hmanrua te a awm bawk.
01
Photovoltaics leh Renewable Energy hmanga thil siam chhuah:
Solar cell siamna line, hydrogenation reactor, leh silicon ingot furnace te a awm bawk.
02
Vacuum & Plasma hmanga thil siam chhuah:
Sputtering coater, plasma etching machine, leh electron beam evaporator te pawh a awm bawk.
03
Research & Development: 1.1.
University lab, ram pum huapa research institute (eg, nanomaterial synthesis atan, fusion energy research atan), leh industrial R&D center-ah te.
04
Optics & Precision hmanrua te: 1.1.
Laser, sensor, emaw astronomical components te tana venhimna enclosure, boruak nghet leh langtlang tak mamawh.
05
Thil neih
|
Taksa lam thil neih (Pysical Properties). |
Hlutna (value) te |
|
Thianghlimna |
＞99.99% |
|
Sakhal zawng |
2.2g/cm a ni3 |
|
Transparency a ni |
＞90% |
|
Mohs Hardness a ni |
5.5--6.5 |
|
Deformation Point a ni |
1280℃a ni |
|
Softening Point a ni |
1780℃a ni |
|
Annealing Point a ni |
1250℃a ni |
|
A lumna bik (20 - 350℃) . |
670J/kg a ni. degree |
|
A rilru a buai em em a, a rilru a hah em em bawk a. 20℃) . |
1.4W/m a ni. degree |
|
A chhuahna tur hmun (w/mk,1000℃) . |
1.0-1.2 |
|
Refractive Index a ni |
1.4585 |
|
A rilru a buai em em a, a rilru a hah em em bawk a. Coefficient of Thermal Expansion |
5.5*10 -7cm/cm a ni. degree |
|
Hot - hnathawhna Temperature |
1750--2050℃thleng a ni |
|
Hun rei lote - chhunga Service Temperature |
1300℃a ni |
|
Hun rei tak - chhung Service Temperature |
1100℃a ni |
|
Chemical lama thil awm dan |
Hlutna (value) te |
|
Acid laka a him lo |
Acid chak tak(HF tih loh chu),Alkali chak tak, organic solution |
|
Temperature sang takah Corrosion resistant a awm thei |
A tha lutuk |
|
Metal bawlhhlawh awm zat |
<5 ppm a ni |
|
Electric lama thil awm dan |
Hlutna (value) te |
|
Resistivity (resistivity) a ni |
7*107Ω.cm a ni |
|
Insulation chakna |
250~400Kv/cm a ni |
|
Dielectric Constant hmanga siam a ni |
3.7~3.9 |
|
Dielectric Absorption Coefficient a ni a, a chhuahna tur hmun leh a hmanna tur a ni |
＜4*10-4 |
|
Dielectric hloh zat (Dielectric loss Coefficient) a ni |
＜1*10-4 |
|
Mechanical lama thil awm dan |
Hlutna (value) te |
|
Compressive chakna a nei |
1100MPa a ni |
|
Bending chakna |
67MPa a ni |
|
Tensile chakna a nei |
48MPa a ni |
|
Poisson-a Ratio a ni |
0.14~0.17 |
|
Young-a Modulus a ni |
72000MPa a ni |
|
Shear Modulus a ni |
31000MPa a ni |
Thawnchhuak
FAQ
Q1: Quartz bell jar hi hydrofluoric acid (HF) nen hman theih a ni em?
A1: Ni lo, HF hian SiO2 nen an inrem a, silicon tetrafluoride (SiF4) a siam a, chu chuan tihchhiat leh theih loh a thlen a ni. HF- awmna process atan PTFE emaw fluoroplastic chamber emaw hmang rawh.
Q2: Quartz bell jar hi high vacuum hnuaiah seal theih a ni em?
A2: Ni e, gasket inmil (eg, ultra-high vacuum atan copper, low/medium vacuum atan Viton) leh flanges (10−10 mbar atan ISO-CF, 10−6 mbar atan ISO-KF) nena paired a nih chuan. Sealing surface te chu a fai a, scratch awm lo turin enfiah rawh.
Q3: Quartz material hian UV light a block em?
A3: No-quartz hian UV light 200nm thlengin a thawn chhuak lo a, hei vang hian UV-sensitive application atan a tha hle. UV-blocking mamawhna atan chuan specialized coated quartz emaw thil dang emaw a awm a (custom solutions atan min rawn biak theih reng e).
Q4: Quartz bell jar-ah hian hole ka drill thei em, port ka dah thei em?
A4: Ni e, kan factory-in precision machining hmangin. Customization laiin port size, hmun leh chi hrang hrang (gas inlet, electrical feedthrough, viewport) te tarlang la, structural integrity leh airtightness a awm theih nan.
hot tags .: quartz bell jar, China quartz bell jar siamtu, supplier, factory
Inquiry thawn rawh .
I duh ve mai thei bawk.
